| 摘要 |
<p>PURPOSE: A memory element and a memory device are provided to improve an iteration property by including nitrogen in addition to tellurium of a chalcogen element in a resistance changing layer. CONSTITUTION: A memory device(1) comprises a memory layer(20) arranged between a first electrode and a second electrode. The memory layer comprises an ion source layer(21) and a resistance changing layer(22). The ion source layer comprises one or more metal elements and one or more chalcogen elements of tellurium, sulfur, and selenium. The resistance changing layer is prepared between the ion source layer and the first electrode. The resistance alteration layer includes tellurium and nitrogen and includes a layer which touches the ion source layer.</p> |
