| 摘要 |
<P>PROBLEM TO BE SOLVED: To apply stable electrical characteristics to a semiconductor device using an oxide semiconductor to achieve high reliability. <P>SOLUTION: A semiconductor device manufacturing method comprises: forming a first insulation film; forming, on the first insulation film, a source electrode and a drain electrode, and an oxide semiconductor film electrically connected with the source electrode and the drain electrode; performing heat treatment on the oxide semiconductor film to remove hydrogen atoms in the oxide semiconductor film; performing oxygen dope processing on the oxide semiconductor film from which the hydrogen atoms are removed to supply oxygen atoms in the oxide semiconductor film; forming a second insulation film on the oxide semiconductor film to which the oxygen atoms are supplied; and forming a gate electrode in a region overlapping the oxide semiconductor film on the second insulation film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
