| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a gate driving circuit that operates at high speed with a simple circuit configuration. <P>SOLUTION: A gate driving circuit comprises: an NPN transistor for applying a positive voltage to a gate terminal of a power semiconductor element; a PNP transistor for applying a negative voltage to the gate terminal of the power semiconductor element; a blocking resistor connected in series to the NPN transistor and the PNP transistor; and a blocking-resistor switching semiconductor switch connected in parallel to the blocking resistor so that its positive electrode is located on the gate terminal side of the power semiconductor element. <P>COPYRIGHT: (C)2013,JPO&INPIT |
