| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a novel structure in which memory contents can be held even under a state where a power is not supplied and there is no limitation in the number of writing times. <P>SOLUTION: A semiconductor device comprises a memory cell including: a first transistor having a first channel formation region, a first gate electrode, a first source region and a drain region; a second transistor having a second channel formation region provided so as to overlap at least a part of the first source region or the drain region and composed of an oxide semiconductor material, a second source electrode, a second drain electrode electrically connected with the first gate electrode, and a second gate electrode; and an insulation layer between the first transistor and the second transistor. When positive potential is applied to at least the first source region or the drain region in a period during which the second transistor should be in an off state, negative potential is applied to the second gate electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
