ESTIMATION OF PRESENCE OF VOID IN THROUGH SILICON VIA (TSV) BASED ON ULTRASOUND SCANNING

摘要

PROBLEM TO BE SOLVED: To detect a defect in a three-dimensional integrated structure by ultrasound scanning and to non-destructively detect the presence of a void that can occur in a process in a through silicon via (TSV) arranged in a board, such as a silicon wafer.

SOLUTION: To prevent measurement by ultrasound scanning over a board surface from being impeded by physical obstructions such as a (solder) bump which scatter ultrasound, one or more TSVs belonging to a test element group (TEG) are selected from among a plurality of TSVs so as to have fewer physical obstructions.

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