发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
A semiconductor integrated circuit that is efficiently reduced in a noise level is offered. P-channel type MOS transistors M1 and M2 serving as differential input transistors have a thin gate oxide film in order to reduce the noise level. A protection circuit to protect the P-channel type MOS transistors M1 and M2 from overvoltage is formed including P-channel type MOS transistors M3 and M4. The P-channel type MOS transistor M3 is a first protection transistor to protect the P-channel type MOS transistor M1 from overvoltage, and is connected to a drain of the P-channel type MOS transistor M1. The P-channel type MOS transistor M4 is a second protection transistor to protect the P-channel type MOS transistor M2 from overvoltage, and is connected to a drain of the P-channel type MOS transistor M2.
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申请公布号 |
US2012320482(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201213495797 |
申请日期 |
2012.06.13 |
申请人 |
ONISHI AKINOBU;HINOKUMA YASUHIRO;KOBAYASHI KAZUYUKI;MURASE KENGO;SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
ONISHI AKINOBU;HINOKUMA YASUHIRO;KOBAYASHI KAZUYUKI;MURASE KENGO |
分类号 |
H02H3/20 |
主分类号 |
H02H3/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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