METHOD FOR FORMING CURRENT DIFFUSION LAYER IN SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A method for forming a current diffusion layer in a semiconductor light emitting device comprises steps of: heating and evaporating an ITO source on an epitaxial wafer by a direct current electron gun to form an ITO layer (16); after a part of the ITO layer (16) which accounts for 85%-90% of the thickness of the ITO layer (16) is deposited, heating and evaporating a doped ZnO source by a pulse current electron gun, and controlling a duty ratio of the pulse current of the pulse current electron gun to deposit a discontinuously arranged doped ZnO layer (17) on the part of the ITO layer (16) during the process of depositing the ITO layer (16); and further heating and evaporating the ITO source by the direct current electron gun to continue depositing a continuously deposited ITO layer (16) which buries the doped ZnO layer (17). Further, a method for fabricating a semiconductor light emitting device is also provided.