发明名称 BACK JUNCTION SOLAR CELL WITH TUNNEL OXIDE
摘要 One embodiment of the present invention provides a back junction solar cell. The solar cell includes a base layer, a quantum-tunneling-barrier (QTB) layer situated below the base layer facing away from incident light, an emitter layer situated below the QTB layer, a front surface field (FSF) layer situated above the base layer, a front-side electrode situated above the FSF layer, and a back-side electrode situated below the emitter layer.
申请公布号 US2012318340(A1) 申请公布日期 2012.12.20
申请号 US201213601441 申请日期 2012.08.31
申请人 HENG JIUNN BENJAMIN;FU JIANMING;XU ZHENG;XIE ZHIGANG;SILEVO, INC. 发明人 HENG JIUNN BENJAMIN;FU JIANMING;XU ZHENG;XIE ZHIGANG
分类号 H01L31/0264;H01L31/0248;H01L31/0368;H01L31/0376;H01L31/18;H01L31/20 主分类号 H01L31/0264
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