SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MENUFACTURING THE SAME
摘要
This invention relates to a semiconductor light emitting device which has superior lateral light extraction efficiency, and to a method of manufacturing the same. The semiconductor light emitting device includes a sapphire substrate and a light emitting structure formed on an upper surface of the sapphire substrate and including a plurality of nitride epitaxial layers including an active layer which produces light, wherein at least one side surface of the light emitting structure is formed as an inclined surface which creates an acute angle relative to the upper surface of the sapphire substrate. In some embodiments, at least one modification region can be formed in a horizontal direction on at least one side surface of the sapphire substrate using laser irradiation.
申请公布号
WO2012173416(A2)
申请公布日期
2012.12.20
申请号
WO2012KR04712
申请日期
2012.06.15
申请人
SEOUL OPTO DEVICE CO., LTD.;SUH, DUCK II;KIM, KYOUNG WAN;YOON, YEO JIN;KIM, YE SEUL;KIM, JI HYE
发明人
SUH, DUCK II;KIM, KYOUNG WAN;YOON, YEO JIN;KIM, YE SEUL;KIM, JI HYE