METHOD TO MITIGATE THROUGH-SILICON VIA-INDUCED SUBSTRATE NOISE
摘要
A semiconductor manufacture includes a first semiconductor including a substrate die having a first surface and having a second surface upon which integrated circuitry is disposed; a second semiconductor die; a through-silicon via (TSV) extending through the first semiconductor die and electrically connected to the second semiconductor die; and at least one ground plug including an electrically conductive material, positioned proximally to the TSV and extending into the substrate of the first semiconductor die from one of the first surface or the second surface.
申请公布号
WO2012125681(A3)
申请公布日期
2012.12.20
申请号
WO2012US29003
申请日期
2012.03.14
申请人
TUFTS UNIVERSITY;KHAN, NAUMAN H.;HASSOUN, SOHA;ALAM, SYED M.