发明名称 Wafer level hermetic bond using metal alloy with keeper layer
摘要 Systems and methods for forming an encapsulated device include a hermetic seal which seals an insulating environment between two substrates, one of which supports the device. The hermetic seal is formed by an alloy of two metal layers, one deposited on a first substrate and the other deposited on the second substrate. At least one of the substrates may include a raised feature formed under at least one of the metal layers. The two metals may for an alloy of a predefined stoichiometry in at least two locations on either side of the midpoint of the raised feature. This alloy may have advantageous features in terms of density, mechanical, electrical or physical properties that may improve the hermeticity of the seal, for example.
申请公布号 US2012319303(A1) 申请公布日期 2012.12.20
申请号 US201213573201 申请日期 2012.08.30
申请人 FOSTER JOHN S.;PARANJPYE ALOK;THOMPSON DOUGLAS L.;GUDEMAN CHRISTOPHER S.;SPONG JAQUELIN K.;INNOVATIVE MICRO TECHNOLOGY 发明人 FOSTER JOHN S.;PARANJPYE ALOK;THOMPSON DOUGLAS L.;GUDEMAN CHRISTOPHER S.;SPONG JAQUELIN K.
分类号 H01L23/28;H01L21/56 主分类号 H01L23/28
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