发明名称 |
SHIELDING FOR HIGH-VOLTAGE SEMICONDUCTOR-ON-INSULATOR DEVICES |
摘要 |
Integrated circuits having doped bands in a substrate and beneath high-voltage semiconductor-on-insulator (SOI) devices are provided. In one embodiment, the invention provides an integrated circuit comprising: a semiconductor-on-insulator (SOI) wafer including: a substrate; a buried oxide (BOX) layer atop the substrate; and a semiconductor layer atop the BOX layer; a plurality of high voltage (HV) devices connected in series within the semiconductor layer; a doped band within the substrate and below a first of the plurality of HV devices; and a contact extending from the semiconductor layer and through the BOX layer to the doped band. |
申请公布号 |
US2012319229(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201213596410 |
申请日期 |
2012.08.28 |
申请人 |
BOTULA ALAN B.;RAINEY BETH ANN;SHI YUN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOTULA ALAN B.;RAINEY BETH ANN;SHI YUN |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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