发明名称 Method for manufacturing e.g. quadratic solar cell, involves back etching portion of highly doped emitter region between portions of metallization structure by using metallization structure as etching mask
摘要 <p>The method involves forming a metallization structure (112) on a highly doped emitter region (108) of a solar cell by screen printing, where the structure comprises contact fingers. A protecting layer (122) is formed on the structure by an electrochemical separation method, electrophoretic painting or coextrusion method to protect the structure during an etching process. A portion of the emitter region between portions of the structure is back etched by using the structure as an etching mask. A silicide contact is formed under the structure. The metallization structure is formed using coextrusion material such as polymer material in the coextrusion method. Independent claims are also included for the following: (1) a solar cell (2) a method for manufacturing a metallization structure.</p>
申请公布号 DE102011051040(A1) 申请公布日期 2012.12.20
申请号 DE20111051040 申请日期 2011.06.14
申请人 SOLARWORLD INNOVATIONS GMBH 发明人 KOEHLER, RENE;KRAUSE, ANDREAS;KUTZER, MARTIN;BITNAR, BERND;HAHN, HARALD;BEUTEL, MARKUS
分类号 H01L31/18;H01L31/0224 主分类号 H01L31/18
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