发明名称 SINGLE-PHASE SEMI-BRIDGE TRANSISTOR INVERTER
摘要 FIELD: electricity.SUBSTANCE: invention relates to electric engineering, namely, to single-phase semi-bridge transistor inverters, is designed for use in electrotechnical industry and may be applied in various secondary sources of supply, for instance, in electric welding devices, charging devices, sources of current with high stabilisation of output rectified current, etc. The proposed device for this comprises an input rectifier, an output rectifier, a smoothening capacitor, a throttle, a current sensor, a high-frequency transformer and a control system, arranged on the basis of transistor keys. Terminals of connection to the load and a current sensor via a unit of galvanic isolation are connected with a unit of anticipatory correction and with a control system.EFFECT: reduced sensitivity of an inverter to load oscillations and higher stability of an output rectified current as a result.2 dwg
申请公布号 RU2470451(C1) 申请公布日期 2012.12.20
申请号 RU20110144255 申请日期 2011.11.01
申请人 FEDERAL'NOE GOSUDARSTVENNOE BJUDZHETNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "UL'JANOVSKIJ GOSUDARSTVENNYJ TEKHNICHESKIJ UNIVERSITET" 发明人 DOMANOV VIKTOR IVANOVICH;MISHIN ALEKSEJ VLADIMIROVICH;MISHIN NIKOLAJ VLADIMIROVICH
分类号 H02M7/5387 主分类号 H02M7/5387
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