| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve a memory cell known as a gain cell, which comprises two transistors and one capacitor. <P>SOLUTION: An electrode on one side of a capacitor is connected to a bit line, and the other electrode is connected to a drain of a write transistor. A source of the write transistor is connected to a source line. Accordingly, for example, when a stack-type capacitor is used as the capacitor, one electrode of the capacitor can be part of the bit line. By setting potentials of the source line and a write bit line, only a specific write transistor can be turned on and only one memory cell can also be rewritten. <P>COPYRIGHT: (C)2013,JPO&INPIT |
