| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that an amplifier region of a semiconductor device has a wider region for various wiring than the size of a circuit element, which prevents reduction of a chip size of the semiconductor device, and accordingly to provide a semiconductor device which reduces the amplifier region and achieves the reduction of the chip size. <P>SOLUTION: In the semiconductor device which includes a first region including a plurality of memory cells for holding each corresponding data and a plurality of sense amplifiers for amplifying each data of the plurality of memory cells on the basis of a first voltage, and a second region that includes a first power source generation circuit for generating the first voltage on the basis of a second voltage and is provided along one side in the first region, the second voltage is supplied to the first power source generation circuit through first power source wiring extending in a first direction parallel to the one side in the first region, on the first region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
