发明名称 PASSIVE COMPENSATION FOR TEMPERATURE-DEPENDENT WAFER GAP CHANGES IN PLASMA PROCESSING SYSTEMS
摘要 Passive wafer gap compensation arrangements and methods relying on temperature-driven dimensional change of thermally expanding component(s) to counteract, substantially or partially, the change in the wafer gap due to chamber component temperature change is provided. The passive arrangements and techniques involve passively raising or lowering the substrate-facing component or the substrate support to counteract, substantially or partially, the gap-narrowing effect or gap-expanding effect of rising temperature, thereby reducing or eliminating the change in the wafer gap due to a change in the chamber component temperature. Cooling arrangement(s) and thermal break(s) are optionally provided to improve performance.
申请公布号 US2012318455(A1) 申请公布日期 2012.12.20
申请号 US201113160452 申请日期 2011.06.14
申请人 FISCHER ANDREAS;SEXTON GREGORY 发明人 FISCHER ANDREAS;SEXTON GREGORY
分类号 C23F1/08 主分类号 C23F1/08
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