发明名称 MULTI-LAYER MASK FOR SUBSTRATE DICING BY LASER AND PLASMA ETCH
摘要 Methods of dicing substrates having a plurality of ICs. A method includes forming a multi-layered mask comprising a first mask material layer soluble in a solvent over the semiconductor substrate and a second mask material layer, insoluble in the solvent, over the first mask material layer. The multi-layered mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is then plasma etched through the gaps in the patterned mask to singulate the IC with the second mask material layer protecting the first mask material layer for at least a portion of the plasma etch. The soluble material layer is dissolved subsequent to singulation to remove the multi-layered mask.
申请公布号 US2012322241(A1) 申请公布日期 2012.12.20
申请号 US201113161427 申请日期 2011.06.15
申请人 APPLIED MATERIALS, INC. 发明人 HOLDEN JAMES M.;LEI WEI-SHENG;EATON BRAD;EGAN TODD;SINGH SARAVJEET
分类号 H01L21/78;H01L21/3065 主分类号 H01L21/78
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