METHOD OF OPERATING FILAMENT ASSISTED CHEMICAL VAPOR DEPOSITION SYSTEM

摘要

A method of performing a filament-assisted chemical vapor deposition process is described. The method includes providing a substrate holder (220, 320, 420, 1020) in a process chamber (410) of a chemical vapor deposition system (400, 600, 1001, 2001), providing a non-ionizing heat source separate from the substrate holder (220, 320, 420, 1020) in the process chamber (410), disposing a substrate (225, 425, 1025) on the substrate holder (220, 320, 420, 1020), introducing a film forming composition (532) to the process chamber (410), thermally fragmenting the film forming composition (532) using the non-ionizing heat source, and forming a thin film on the substrate (225, 425, 1025) in the process chamber (410). The non-ionizing heat source includes a gas heating device (250, 445, 550, 645, 750, 800, 900, 1045, 2045) through and/or over which the film forming composition (532) flows. The method further includes remotely producing a reactive composition, and introducing the reactive composition to the process chamber (410) to interact with the substrate (225, 425, 1025), wherein the reactive composition is introduced sequentially and/or simultaneously with the introducing the film forming composition (532).