POWER SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING SAME

摘要

[Objective] To provide a power semiconductor module in which a sealing material is used which is suited to the temperature in the vicinity of a power semiconductor module element in which a silicon carbide element is used, and the exterior peripheral temperature thereof. [Solution] A power semiconductor module comprises: an insulation layer; a copper-based substrate, further comprising a first copper block and a second copper block which are respectively anchored to one face and another face of the insulation layer; a plurality of power semiconductor elements in which silicon carbide is used, one face of which being anchored upon the first copper block by a conductive bonding layer; a plurality of implant pins which are anchored to another face of each respective power semiconductor element by a conductive binding layer; a printed substrate which is anchored to the implant pins and is positioned facing the power semiconductor element; a first sealing material wherein a heat-resistant material is not added and which is positioned at least between the power semiconductor elements and the printed substrate; and a second sealing material wherein a heat-resistant material is added and which is positioned to cover the first sealing material.