POWER DEVICE, AND METHOD FOR PRODUCING POWER DEVICE

摘要

The device is equipped with: an interlayer insulating film (10) comprising silicon oxide (SiO2) formed over a barrier layer (4) (AlGaN); a first contact hole portion (11a) formed over a source electrode (5) of the interlayer insulating film (10), and having a first side wall (W1) approximately perpendicular to the plane of the substrate; a second contact hole portion (11b) formed in the interlayer insulating film (10) in such a way as to become progressively wider toward the top side from the top edge of the first side wall (W1) of the first contact hole portion (11a), and having a second side wall (W2) that is inclined with respect to the plane of the substrate; and a wiring layer (12) formed within the first and second contact hole portions (11a, 11b) and over the interlayer insulating film (10). The thickness of the wiring layer (12) is greater than the dimension of the first side wall (W1) in the first contact hole portion (11a) in the direction of substrate thickness. A power device of improved electromigration resistance and long-term reliability is provided thereby, without the use of organic materials that can cause film peeling.