OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: An oxide thin film transistor and a manufacturing method thereof are provided to improve device characteristics by forming source and drain electrodes on the upper part and the lower part of an active layer to increase a contact area with the active layer. CONSTITUTION: A gate electrode(121) composed of a first conductive film is formed on a substrate(110). A gate insulating film(115a) is formed on the gate insulating film. A first data wiring and a second data wiring are formed on the gate insulating film. The first data wiring includes a source electrode(122), a first drain electrode(123) and a first data line(117). The second data wiring includes a second drain electrode(123') and a second data line(117'). An active layer(124) is formed on the upper part of the source electrode and the first drain electrode.