SILICON CARBIDE SINTERED BODY, METHOD FOR MANUFACTURING THE SAME AND SUSCEPTOR INCLUDING THE SAME

摘要

PURPOSE: A sintered silicon carbide with high purity by excluding the use of sintering gradient material, a manufacturing method thereof and a susceptor including the same are provided to enhance strength and heat resistance. CONSTITUTION: A sintered silicon carbide with high purity comprises 95-100 wt% of beta phase silicon carbide. The diameter of the grain of the silicon carbide is 0.1-3 micro meters. The silicon carbide sintered body has the density of 3--3.15g/cm^3. The silicon carbide sintered body has the thermal conductivity of 180-200W/m·K. A manufacturing method of the silicon carbide sintered body comprises the following steps: placing the silicon carbide pulverized body(30) in a mold(10); heat treating the silicon carbide pulverized body under the first pressure and temperature; and pressing the silicon carbide pulverized body under the second pressure and temperature. The second pressure is higher than the first pressure, and the second temperature is higher than the first temperature. [Reference numerals] (AA, BB) Heat pressure