| 摘要 |
<P>PROBLEM TO BE SOLVED: To increase arrangement density of a dummy pattern in a semiconductor substrate. <P>SOLUTION: In a semiconductor substrate 104, a wiring pattern 102 and a dummy pattern 106 are laid out. A margin region is laid out in the periphery of the wiring pattern 102, and a dummy region is laid out in the periphery of the margin region. A plurality of dummy patterns 106 are laid out in the dummy region. The dummy pattern 106 is arranged in a direction in which the dummy region extends. The margin region and the dummy region are alternately laid out with reference to the wiring pattern 102. <P>COPYRIGHT: (C)2013,JPO&INPIT |
