发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A semiconductor memory device comprises: a semiconductor substrate; a memory cell array provided above the semiconductor substrate and including a plurality of memory cells that are stacked; a plurality of bit lines connected electrically to the plurality of memory cells; and a plurality of sense amplifiers connected to the bit lines via bit line connection lines. The bit line connection lines have every adjacent N lines (where N is an integer of 2 or more) as one group. The sense amplifiers are arranged in a number smaller than N in a first direction that the bit line connection lines extend. An M number of the sense amplifiers are arranged in a width of a P number of groups in a second direction intersecting the first direction. The M number being larger than the P number
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申请公布号 |
US2012320651(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201213495366 |
申请日期 |
2012.06.13 |
申请人 |
KONO FUMIHIRO;KABUSHIKI KAISHA TOSHIBA |
发明人 |
KONO FUMIHIRO |
分类号 |
G11C5/02;G11C5/06;G11C7/06 |
主分类号 |
G11C5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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