ARTIFICIAL MICROSTRUCTURE AND ARTIFICIAL ELECTROMAGNETIC MATERIAL USING SAME
摘要
Provided are an artificial microstructure and an artificial electromagnetic material comprising same. The artificial microstructure comprises two non-intersecting, H-shaped metal wire structures. The artificial electromagnetic material having said artificial microstructure has a high resonant frequency, a wide effective working frequency band, and is suitable for various applications.
申请公布号
WO2012171295(A1)
申请公布日期
2012.12.20
申请号
WO2011CN81441
申请日期
2011.10.27
申请人
KUANG-CHI INSTITUTE OF ADVANCED TECHNOLOGY;KUANG-CHI INNOVATIVE TECHNOLOGY LTD.;LIU, RUOPENG;LUAN, LIN;KOU, CHAOFENG;YE, JINCAI