发明名称 ARTIFICIAL MICROSTRUCTURE AND ARTIFICIAL ELECTROMAGNETIC MATERIAL USING SAME
摘要 Provided are an artificial microstructure and an artificial electromagnetic material comprising same. The artificial microstructure comprises two non-intersecting, H-shaped metal wire structures. The artificial electromagnetic material having said artificial microstructure has a high resonant frequency, a wide effective working frequency band, and is suitable for various applications.
申请公布号 WO2012171295(A1) 申请公布日期 2012.12.20
申请号 WO2011CN81441 申请日期 2011.10.27
申请人 KUANG-CHI INSTITUTE OF ADVANCED TECHNOLOGY;KUANG-CHI INNOVATIVE TECHNOLOGY LTD.;LIU, RUOPENG;LUAN, LIN;KOU, CHAOFENG;YE, JINCAI 发明人 LIU, RUOPENG;LUAN, LIN;KOU, CHAOFENG;YE, JINCAI
分类号 H01Q15/00;B81B7/00 主分类号 H01Q15/00
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