发明名称 |
SEMICONDUCTOR DEVICE INCLUDING STORAGE DEVICE AND METHOD FOR DRIVING THE SAME |
摘要 |
A structure of a storage device which can operate memory elements utilizing silicide reaction using the same voltage value for writing and for reading, and a method for driving the same are proposed. The present invention relates to a storage device including a memory element and a circuit which changes a polarity of applying voltage to the memory element for writing (or reading) into a different polarity of that for reading (or writing). The memory element includes at least a first conductive layer, a film including silicon formed over the first conductive layer, and a second conductive layer formed over the silicon film. The first conductive layer and the second conductive layer of the memory element are formed using different materials. |
申请公布号 |
US2012319075(A1) |
申请公布日期 |
2012.12.20 |
申请号 |
US201213599272 |
申请日期 |
2012.08.30 |
申请人 |
TOKUNAGA HAJIME;SAITO TOSHIHIKO;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TOKUNAGA HAJIME;SAITO TOSHIHIKO |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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