| 摘要 |
<p>This nitride semiconductor device is provided with: an undoped GaN layer (1) and an undoped AlGaN layer (2), which are formed on an Si substrate (10); and ohmic electrodes (a source electrode (11) and a drain electrode (12)), which are formed on the undoped GaN layer (1) and the undoped AlGaN layer (2), and are composed of Ti/Al/TiN. The oxygen concentration of the ohmic electrodes is 1×1016cm-3 to 1×1020cm-3. Consequently, the nitride semiconductor device having reduced contact resistance between the nitride semiconductor layers and the ohmic electrodes is provided.</p> |
