POST DEPOSITION METHOD FOR REGROWTH OF CRYSTALLINE PHASE CHANGE MATERIAL
摘要
<p>A phase change memory cell with substantially void free crystalline phase change material. An example memory cell includes a substrate and a bottom electrode carried by the substrate. The bottom electrode is a thermal conductor. A phase change layer includes phase change material. The phase change layer is void free within a switching region when the phase change material is in a crystalline phase. A top electrode is positioned over the phase change layer.</p>
申请公布号
EP2534710(A1)
申请公布日期
2012.12.19
申请号
EP20110742594
申请日期
2011.01.10
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
CHUNG, LAM H.;ROSSNAGEL, STEPHEN M.;SCHROTT, ALEJANDRO G.