发明名称 |
METHOD OF PRODUCING SILYLATED POROUS INSULATING FILM, METHOD OF PRODUCING SEMICONDUCTOR DEVICE, AND SILYLATED MATERIAL |
摘要 |
To appropriately perform the silylation treatment to a silica-based porous dielectric film having a plurality of pores, a method of manufacturing a silylated porous dielectric film 204c includes forming a porous dielectric film 204b having a plurality of pores and applying, to the porous dielectric film 204b, the silylation material vapor 210 obtained by evaporating the silylation material containing an organic silane compound having a hydrophobic group and a polymerization inhibitor for suppressing self-polymerization of the organic silane compound. |
申请公布号 |
EP2284874(A4) |
申请公布日期 |
2012.12.19 |
申请号 |
EP20090754429 |
申请日期 |
2009.05.26 |
申请人 |
RENESAS ELECTRONICS CORPORATION;ULVAC, INC. |
发明人 |
KINOSHITA, KEIZO;CHIKAKI, SHINICHI;NAKAYAMA, TAKAHIRO |
分类号 |
H01L21/312;H01L21/3105;H01L21/768;H01L23/522;H01L23/532 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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