| 发明名称 |
METHODS OF FORMING A PLURALITY OF TRANSISTOR GATES, AND METHODS OF FORMING A PLURALITY OF TRANSISTOR GATES HAVING AT LEAST TWO DIFFERENT WORK FUNCTIONS |
| 摘要 |
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| 申请公布号 |
EP2342740(A4) |
申请公布日期 |
2012.12.19 |
| 申请号 |
EP20090825209 |
申请日期 |
2009.10.23 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
SANDHU, GURTEJ, S.;KIEHLBAUCH, MARK |
| 分类号 |
H01L21/336;H01L21/8234;H01L21/8238;H01L29/78 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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