METAL SUBSTRATE WITH INSULATION LAYER AND MANUFACTURING METHOD THEREOF, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, SOLAR CELL AND MANUFACTURING METHOD THEREOF, ELECTRONIC CIRCUIT AND MANUFACTURING METHOD THEREOF, AND LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF

摘要

A metal substrate with an insulation layer includes a metal substrate having at least an aluminum base and an insulation layer formed on said aluminum base of said metal substrate. The insulation layer is a porous type anodized film of aluminum. The anodized film includes a barrier layer portion and a porous layer portion, and at least the porous layer portion has compressive strain at room temperature. a magnitude of the strain ranges from 0.005% to 0.25%. The anodized film has a thickness of 3 micrometers to 20 micrometers.