发明名称 |
MICROELECTRONIC DEVICES WITH THROUGH-SUBSTRATE INTERCONNECTS AND ASSOCIATED METHODS OF MANUFACTURING |
摘要 |
Microelectronic devices with through-substrate interconnects and associated methods of manufacturing are disclosed herein. In one embodiment, a semiconductor device includes a semiconductor substrate carrying first and second metallization layers. The second metallization layer is spaced apart from the semiconductor substrate with the first metallization layer therebetween. The semiconductor device also includes a conductive interconnect extending at least partially through the semiconductor substrate. The first metallization layer is in electrical contact with the conductive interconnect via the second metallization layer. |
申请公布号 |
EP2534682(A2) |
申请公布日期 |
2012.12.19 |
申请号 |
EP20110740230 |
申请日期 |
2011.01.31 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
KIRBY, KYLE, K.;PAREKH, KUNAL, R.;NIROUMAND, SARAH, A. |
分类号 |
H01L23/00;H01L21/768;H01L23/48;H01L25/065 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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