| 摘要 |
<p>The nitride semiconductor laser device includes a substrate (10), a nitride semiconductor layer having a first nitride semiconductor layer (21), an active layer (22), and a second nitride semiconductor layer (23) stacked in this order on the substrate (10), and a ridge (24) provided on a surface of the nitride semiconductor layer. The surface of the nitride semiconductor layer includes a generally flat part and first and second grooves (25) which extend along the ridge (24) in a resonator direction, the first groove being formed continuous to a first side surface of the ridge (24), the second groove being formed continuous to a second side surface of the ridge which is opposite to the first side surface.
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