Integrated circuit chip comprising protecting means against attacks

摘要

The chip (31) has a protection device with an N-type layer (23) extending under and contacting N-type and P-type wells (5, 7). A lateral insulation region (25) of the device is arranged between the wells, and extends from an upper surface of a substrate (Psub) to the protection layer. A trench of the region is provided with insulated walls and filled with a conductive material (29) i.e. polysilicon. An attack detection circuit (33) of the device is associated with the region, and detects variations of voltage of the conductive material of the region. The substrate is a lightly-doped P-type semiconductor substrate. The integrated circuit chip is formed from P-type substrate and N-type substrate. An independent claim is also included for a method for manufacturing an integrated circuit chip.