<p>A semiconductor device having a gate positioned in a recess between the source region and a drain region that are adjacent either side of the gate electrode. A channel region is below a majority of the source region as well as a majority of the drain region and the entire gate electrode.</p>
申请公布号
EP2535938(A2)
申请公布日期
2012.12.19
申请号
EP20120171809
申请日期
2012.06.13
申请人
STMICROELECTRONICS INC;INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
CLEVENGER, LAWRENCE A.;RADENS, CARL;XU, YIHENG;ZHANG, JOHN H.