发明名称 CLEANING COMPOSITION FOR PHOTOLITHOGRAPHY AND METHOD FOR FORMING PHOTORESIST FINE PATTERN USING THE SAME
摘要 PURPOSE: A cleaning liquid composition for photolithography and a photoresist micropattern forming method using the same are provided to efficiently form micropatterns by reduce the hole sizes of photoresist patterns by including an ionic compound. CONSTITUTION: A cleaning liquid composition includes an ionic compound and a solvent. The ionic compound is selected from a compound represented by chemical formula 1, a compound represented by chemical formula 2, and the mixture of the compounds. In chemical formulas, R1 and R2 are hydrogen atoms or substituted or non-substituted C1-25 hydrocarbon groups. A photoresist micropattern forming method includes the following steps: a photoresist layer is formed on a semiconductor substrate; photoresist patterns are formed by exposing the developing the photoresist layer; the photoresist patterns are cleaned with the cleaning liquid composition; and the cleaned photoresist patterns are dried and hard baked to reduce the hole sizes of the patterns.
申请公布号 KR20120135958(A) 申请公布日期 2012.12.18
申请号 KR20110054873 申请日期 2011.06.08
申请人 DONGJIN SEMICHEM CO., LTD. 发明人 OH, SEUNG KEUN;LEE, JAE WOO;KIM, JAE HYUN
分类号 G03F7/42;G03F7/40;H01L21/306 主分类号 G03F7/42
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