发明名称 |
CLEANING COMPOSITION FOR PHOTOLITHOGRAPHY AND METHOD FOR FORMING PHOTORESIST FINE PATTERN USING THE SAME |
摘要 |
PURPOSE: A cleaning liquid composition for photolithography and a photoresist micropattern forming method using the same are provided to efficiently form micropatterns by reduce the hole sizes of photoresist patterns by including an ionic compound. CONSTITUTION: A cleaning liquid composition includes an ionic compound and a solvent. The ionic compound is selected from a compound represented by chemical formula 1, a compound represented by chemical formula 2, and the mixture of the compounds. In chemical formulas, R1 and R2 are hydrogen atoms or substituted or non-substituted C1-25 hydrocarbon groups. A photoresist micropattern forming method includes the following steps: a photoresist layer is formed on a semiconductor substrate; photoresist patterns are formed by exposing the developing the photoresist layer; the photoresist patterns are cleaned with the cleaning liquid composition; and the cleaned photoresist patterns are dried and hard baked to reduce the hole sizes of the patterns.
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申请公布号 |
KR20120135958(A) |
申请公布日期 |
2012.12.18 |
申请号 |
KR20110054873 |
申请日期 |
2011.06.08 |
申请人 |
DONGJIN SEMICHEM CO., LTD. |
发明人 |
OH, SEUNG KEUN;LEE, JAE WOO;KIM, JAE HYUN |
分类号 |
G03F7/42;G03F7/40;H01L21/306 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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