发明名称 |
Method for forming trenches and trench isolation on a substrate |
摘要 |
A method for forming trench isolation on a substrate includes providing a substrate having thereon a pad layer and a hard mask; forming a first shallow trench in a first area and a second trench in a second area on the substrate; forming a resist layer covering the first area while exposing the second area; etching the second shallow trench to form a deep trench; forming oxide liner within the first shallow trench and the deep trench; and filling the shallow trench and the deep trench with an oxide layer. |
申请公布号 |
US8334189(B2) |
申请公布日期 |
2012.12.18 |
申请号 |
US201113011936 |
申请日期 |
2011.01.24 |
申请人 |
KAO CHING-HUNG;UNITED MICROELECTRONICS CORP. |
发明人 |
KAO CHING-HUNG |
分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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