Semiconductor device having image sensor

摘要

A pixel area for generating an image signal corresponding to incident light is formed on a semiconductor substrate. A light-shielding layer is formed on the semiconductor substrate around the pixel area. The light-shielding layer has a slit near the pixel area and shields the incident light. A passivation film is formed in the pixel area, on the light-shielding layer, and in the slit. A coating layer is formed in the slit of the light-shielding layer and on the passivation film in the pixel area. Microlenses are formed on the coating layer in the pixel area.