发明名称 |
Methods of forming pattern structures |
摘要 |
An example embodiment relates to a method of forming a pattern structure, including forming an object layer on a substrate, and forming a hard mask on the object layer. A plasma reactive etching process is performed on the object layer using an etching gas including a fluorine containing gas and ammonia (NH3) gas together with oxygen gas to form a pattern. The oxygen gas is used for suppressing the removal of the hard mask during the etching process. |
申请公布号 |
US8334148(B2) |
申请公布日期 |
2012.12.18 |
申请号 |
US201113184127 |
申请日期 |
2011.07.15 |
申请人 |
JEONG JUN-HO;LEE JANG-EUN;KIM WOO-JIN;SHIN HEE-JU;RYU YONG-HWAN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEONG JUN-HO;LEE JANG-EUN;KIM WOO-JIN;SHIN HEE-JU;RYU YONG-HWAN |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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