发明名称 |
Solid-state imaging device, method of manufacturing solid-state imaging device, method of driving solid-state imaging device, and electronic apparatus |
摘要 |
A solid-state imaging device includes: a substrate; a substrate voltage supply applying a first potential to the substrate during a light receiving period including first and second exposure periods different from each other and applying a second potential to the substrate during a no-light receiving period; and a plurality of pixels each including: a light receiving portion formed on a front surface side of the substrate and generating a signal charge in accordance with received light; a storage capacitor formed adjacent to the light receiving portion so that the signal charge generated in the light receiving portion is transmitted thereto and is stored and held therein when the first potential is applied to the substrate; dark current suppressing portions; an electronic shutter adjusting layer; a reading gate portion; and a vertical transmission register transmitting the signal charge read by the reading gate portion in the vertical direction.
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申请公布号 |
US8334498(B2) |
申请公布日期 |
2012.12.18 |
申请号 |
US20100695336 |
申请日期 |
2010.01.28 |
申请人 |
KANBE HIDEO;SONY CORPORATION |
发明人 |
KANBE HIDEO |
分类号 |
H01L31/00;H01L27/148;H04N5/335;H04N5/355;H04N5/369;H04N5/372 |
主分类号 |
H01L31/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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