发明名称 |
Manufacturing method of semiconductor device |
摘要 |
Technology capable of preventing the deterioration of the reliability of semiconductor devices caused by the gasification of a part of the material constituting a wiring substrate is provided. A wiring layer constituting a circuit pattern is formed over each of the front and rear surfaces of a glass epoxy substrate, and after the formation of a solder resist covering the wiring layer while exposing a part of the wiring layer and prior to a heat treatment (first heat treatment) at 100° C. to 150° C. for dehumidification, a heat treatment (second heat treatment) at 160° C. to 230° C. for gasifying and discharging an organic solvent contained in the material constituting a wiring substrate is performed for the wiring substrate.
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申请公布号 |
US8334172(B2) |
申请公布日期 |
2012.12.18 |
申请号 |
US201113023976 |
申请日期 |
2011.02.09 |
申请人 |
KURODA SOSHI;YASUNAGA MASATOSHI;MATSUSHIMA HIRONORI;HIRONAGA KENYA;RENESAS ELECTRONICS CORPORATION |
发明人 |
KURODA SOSHI;YASUNAGA MASATOSHI;MATSUSHIMA HIRONORI;HIRONAGA KENYA |
分类号 |
H01L21/786;H01L21/00;H01L21/56;H01L21/58;H01L21/60 |
主分类号 |
H01L21/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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