发明名称 Solid state imaging device that suppresses generation of dark current, and imaging apparatus
摘要 A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.
申请公布号 US8334552(B2) 申请公布日期 2012.12.18
申请号 US20100763615 申请日期 2010.04.20
申请人 OSHIYAMA ITARU;ANDO TAKASHI;HIYAMA SUSUMU;YAMAGUCHI TETSUJI;OHGISHI YUKO;IKEDA HARUMI;SONY CORPORATION 发明人 OSHIYAMA ITARU;ANDO TAKASHI;HIYAMA SUSUMU;YAMAGUCHI TETSUJI;OHGISHI YUKO;IKEDA HARUMI
分类号 H01L27/148;H01L27/146;H01L31/00;H01L31/10;H04N5/335;H04N5/361;H04N5/369 主分类号 H01L27/148
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