发明名称 |
Junction varactor for ESD protection of RF circuits |
摘要 |
An ESD protection device includes a first well of a first semiconductor type disposed in a substrate of a second semiconductor type forming a first diode. A second well of the second semiconductor type is formed in the substrate to form a second diode with the first well. A first plurality of doped regions of the first semiconductor type are formed in an upper surface of the first well. A second plurality of doped regions of the second semiconductor type are formed in the upper surface of the first well forming a third diode with the first well. A plurality of STI regions are formed in the upper surface of the first well. Each STI region is disposed between a doped region of the first and second semiconductor types. The third diode provides a current bypass when an ESD voltage spike is received at one of the first or second plurality of doped regions. |
申请公布号 |
US8334571(B2) |
申请公布日期 |
2012.12.18 |
申请号 |
US20100731562 |
申请日期 |
2010.03.25 |
申请人 |
TSAI MING-HSIEN;YEH TZU-JIN;JOU CHEWN-PU;HSUEH FU-LUNG;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
TSAI MING-HSIEN;YEH TZU-JIN;JOU CHEWN-PU;HSUEH FU-LUNG |
分类号 |
H01L23/60;H01L23/64;H01L29/08 |
主分类号 |
H01L23/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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