发明名称 |
Metal gate stress film for mobility enhancement in FinFET device |
摘要 |
A CMOS FinFET semiconductor device provides an NMOS FinFET device that includes a compressive stress metal gate layer over semiconductor fins and a PMOS FinFET device that includes a tensile stress metal gate layer over semiconductor fins. A process for forming the same includes a selective annealing process that selectively converts a compressive metal gate film formed over the PMOS device to the tensile stress metal gate film. |
申请公布号 |
US8334570(B2) |
申请公布日期 |
2012.12.18 |
申请号 |
US201113041066 |
申请日期 |
2011.03.04 |
申请人 |
XU JEFF J.;WANN CLEMENT H.;YEH CHI CHEH;CHANG CHI-SHENG;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
XU JEFF J.;WANN CLEMENT H.;YEH CHI CHEH;CHANG CHI-SHENG |
分类号 |
H01L27/092 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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