Organic thin-film transistor and method for manufacturing the same

摘要

An organic thin-film transistor of the present invention has a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor layer provided above a substrate, and further has a thiol compound layer composed of a benzenethiol compound and provided on a surface of the source electrode and a thiol compound layer composed of a benzenethiol compound and provided on a surface of the drain electrode. This makes it possible to provide an organic thin-film transistor whose threshold voltage can be selectively controlled without greatly affecting a current characteristic other than the threshold voltage.