NON-VOLATILE MEMORY CELL AND NON-VOLATILE MEMORY DEVICE COMPRISING THE CELL

摘要

PURPOSE: A nonvolatile memory cell and a non-volatile memory device including the same are provided to improve voltage and current characteristics by including a diffusion barrier film which prevents the diffusion of conducting material. CONSTITUTION: A first inter-layer insulating film(111) and a second inter-layer insulating film(112) are separated each other and are successively laminated. A first electrode(115) passes through the first inter-layer insulating film and the second inter-layer insulating film. A resistance alteration film(116) is formed side by side with the first electrode along the side of the first electrode. A second electrode is formed between the first inter-layer insulating film and the second inter-layer insulating film. A diffusion barrier film prevents the diffusion of conducting material including a conductive film.