PURPOSE: An image sensor and a manufacturing method thereof are provided to prevent cross-talk by blocking light which is entered from a pixel region by including a light-shield pattern. CONSTITUTION: A substrate comprises a pixel region(PIR) and a pad area(PAR). A through via penetrates the substrate in the pad region. A plurality of unit pixels(52) is arranged in the pixel region. A light-shield pattern is arranged between the unit pixels in the pixel region. The through via and the light-shield pattern comprise same material.
申请公布号
KR20120135627(A)
申请公布日期
2012.12.17
申请号
KR20110054445
申请日期
2011.06.07
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, SANG HOON;PARK, BYUNG JUN;KOO, JUNE MO;YOO, GIL SANG;SHIN, SEUNG HUN