发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve electrical characteristics of a semiconductor diode by forming bottom wires arranged between a substrate and the semiconductor diode into metallic material. CONSTITUTION: Bottom wires(150) are arranged on a semiconductor substrate. Top wires(190) cross the bottom wires. Semiconductor pillars(SP) are arranged in a cross region of the bottom wires and the top wires. The each semiconductor pillar comprises a top impurity region of a first conductivity type. A low concentration impurity region is adjacent to high concentration impurity region and the top impurity region.</p> |
申请公布号 |
KR20120135628(A) |
申请公布日期 |
2012.12.17 |
申请号 |
KR20110054447 |
申请日期 |
2011.06.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JAE KYU;SUH, KI SEOK;YOON, TAE EUNG |
分类号 |
H01L27/02;H01L21/28;H01L21/8247;H01L27/115 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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