发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve electrical characteristics of a semiconductor diode by forming bottom wires arranged between a substrate and the semiconductor diode into metallic material. CONSTITUTION: Bottom wires(150) are arranged on a semiconductor substrate. Top wires(190) cross the bottom wires. Semiconductor pillars(SP) are arranged in a cross region of the bottom wires and the top wires. The each semiconductor pillar comprises a top impurity region of a first conductivity type. A low concentration impurity region is adjacent to high concentration impurity region and the top impurity region.</p>
申请公布号 KR20120135628(A) 申请公布日期 2012.12.17
申请号 KR20110054447 申请日期 2011.06.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JAE KYU;SUH, KI SEOK;YOON, TAE EUNG
分类号 H01L27/02;H01L21/28;H01L21/8247;H01L27/115 主分类号 H01L27/02
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