发明名称 |
COPPER ALLOY FOR ELECTRONIC MATERIAL AND METHOD OF MANUFACTURE FOR SAME. |
摘要 |
<p>Disclosed is a copper alloy for electronic material which exhibits excellent plating film uniformity. When the cross section of the copper alloy is observed by SIM in a direction parallel to the rolling direction thereof: at a depth of 5μm or less from the surface layer, the area of the copper alloy occupied by amorphous structures and crystal grains having a grain diameter of less than 1μm is at most 1%; and at a depth of 0.2-0.5μm from the surface layer, the ratio of the number of crystal grains having a grain diameter of at least 0.1μm and less than 0.2nm to the overall number of crystal grains having a grain diameter of at least 1μm is at least 47.5%.</p> |
申请公布号 |
MX2012010887(A) |
申请公布日期 |
2012.12.17 |
申请号 |
MX20120010887 |
申请日期 |
2011.03.23 |
申请人 |
JX NIPPON MINING & METALS CORPORATION.* |
发明人 |
HIROSHI KUWAGAKI |
分类号 |
C25D5/34;C22C9/00;C22C9/01;C22C9/02;C22C9/04;C22C9/05;C22C9/06;C22C9/10;C25D7/00 |
主分类号 |
C25D5/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|